PART |
Description |
Maker |
FDB3682NL |
100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package 6 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
IRHG58110 IRHG53110 IRHG54110 IRHG57110 |
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
|
IRF[International Rectifier]
|
IRFY9240 IRFY9240M |
-200V Single P-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
IRFY340 IRFY340M IRFY340SCX |
POWER MOSFET THRU-HOLE (TO-257AA) 400V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package
|
International Rectifier
|
IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
JANS2N7236 IRFM9140 JANTX2N7236 JANTXV2N7236 IRFM9 |
Simple Drive Requirements 18 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA From old datasheet system POWER MOSFET THRU-HOLE (TO-254AA) -100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
2SJ555 |
0.036 ohm, POWER, FET Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
IRFY9140C |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
IRHM57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
IRF7Y1405CM IRF7Y1405CM-15 |
HEXFET? POWER MOSFET THRU-HOLE (TO-257AA) 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package Avalanche Energy Ratings
|
International Rectifier
|